Pervasive Electronics Advanced Research Laboratory
PEARL
Osaka City University
Osaka, JapónOsaka City University-ko ikertzaileekin lankidetzan egindako argitalpenak (5)
2013
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration
Solid-State Electronics, Vol. 90, pp. 127-133
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Effective capacitance area for pseudo-MOSFET characterization of bare SOIWafers by Split-C(V) measurements
ECS Journal of Solid State Science and Technology, Vol. 2, Núm. 12
2012
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Impact of effective capacitance area on the characterization of SOI Wafers by Split-C(V) in Pseudo-MOSFET configuration
IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012
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Multibranch mobility analysis for the characterization of FDSOI transistors
IEEE Electron Device Letters, Vol. 33, Núm. 8, pp. 1102-1104
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Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET
European Solid-State Device Research Conference