Publikationen, an denen er mitarbeitet CARLOS NAVARRO MORAL (17)

2024

  1. Editorial “Selected papers from the international conference on simulation of semiconductor processes and devices 2022”

    Solid-State Electronics

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Simulation of BioGFET sensors using TCAD

    Solid-State Electronics, Vol. 208

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  3. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2021

  1. Hysteresis in as-synthesized mos2 transistors: Origin and sensing perspectives

    Micromachines, Vol. 12, Núm. 6

2020

  1. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. Capacitorless memory devices using virtual junctions

    19th International Workshop on Junction Technology, IWJT 2019

  2. Capacitorless memory devices using virtual junctions

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)

  3. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

    2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

  2. InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 884-892

  3. Towards InGaAs MSDRAM capacitor-less cells

    ECS Transactions

2017

  1. Gate-induced vs. implanted body doping impact on Z(2)-FET DC operation

    2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)

  2. Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909