Publicaciones en las que colabora con A. Asenov (22)

2021

  1. Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator

    Micromachines, Vol. 12, Núm. 6

2020

  1. Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation

    Micromachines, Vol. 11, Núm. 2

  3. Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study

    2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019

  2. Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

  4. Thorough Understanding of Retention Time of Z2FET Memory Operation

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 383-388

2018

  1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters

    Solid-State Electronics, Vol. 143, pp. 10-19

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Simulation study on Z2FET scalability, process optimization and their impact on performance

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

2017

  1. 2D-TCAD simulation on retention time of Z2FET for DRAM application

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  3. Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491

  4. Low-power Z2-FET capacitorless 1T-DRAM

    2017 IEEE 9th International Memory Workshop, IMW 2017

  5. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  6. Simulation based DC and dynamic behaviour characterization of Z2FET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  7. The mystery of the Z2-FET 1T-DRAM memory

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  8. Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909