Publikationen, an denen er mitarbeitet ENRIQUE GONZÁLEZ MARÍN (41)

2023

  1. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  2. Graphene-on-Silicon Hybrid Field-Effect Transistors

    Advanced Electronic Materials, Vol. 9, Núm. 5

  3. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

  4. Variability Assessment of the Performance of MoS2-Based BioFETs

    Chemosensors, Vol. 11, Núm. 1

2022

  1. Multi-scale modeling of 2D GaSe FETs with strained channels

    Nanotechnology, Vol. 33, Núm. 10

  2. Periodic structures based on two-dimensional materials: application to phase shifters

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

2021

  1. A unified compact model for electrostatics of III–V GAA transistors with different geometries

    Journal of Computational Electronics, Vol. 20, Núm. 5, pp. 1676-1684

  2. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  3. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  4. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Compact Modeling of Multi-Layered MoS2FETs including Negative Capacitance Effect

    IEEE Journal of the Electron Devices Society, Vol. 8, pp. 1177-1183

  3. Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2FETs

    4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

  4. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs

    4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

2019

  1. A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79

  2. A compact model for III–V nanowire electrostatics including band non-parabolicity

    Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235

  3. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085

  4. Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs with Square Geometry

    2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019

  5. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD