FRANCISCO JAVIER
GARCÍA RUIZ
CATEDRÁTICO DE UNIVERSIDAD
ENRIQUE
GONZÁLEZ MARÍN
PROFESOR TITULAR DE UNIVERSIDAD
Publications by the researcher in collaboration with ENRIQUE GONZÁLEZ MARÍN (41)
2023
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Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics
Small, Vol. 19, Núm. 49
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Graphene-on-Silicon Hybrid Field-Effect Transistors
Advanced Electronic Materials, Vol. 9, Núm. 5
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Reconfigurable frequency multipliers based on graphene field-effect transistors
Discover Nano, Vol. 18, Núm. 1
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Variability Assessment of the Performance of MoS2-Based BioFETs
Chemosensors, Vol. 11, Núm. 1
2022
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Multi-scale modeling of 2D GaSe FETs with strained channels
Nanotechnology, Vol. 33, Núm. 10
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Periodic structures based on two-dimensional materials: application to phase shifters
DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
2021
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A unified compact model for electrostatics of III–V GAA transistors with different geometries
Journal of Computational Electronics, Vol. 20, Núm. 5, pp. 1676-1684
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Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors
IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919
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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
Nano Express, Vol. 2, Núm. 3
2020
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
IEEE Access, Vol. 8, pp. 209055-209063
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Compact Modeling of Multi-Layered MoS2FETs including Negative Capacitance Effect
IEEE Journal of the Electron Devices Society, Vol. 8, pp. 1177-1183
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Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2FETs
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
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Numerical study of surface chemical reactions in 2D-FET based pH sensors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
2019
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A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors
IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79
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A compact model for III–V nanowire electrostatics including band non-parabolicity
Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235
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Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs
Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085
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Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs with Square Geometry
2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019
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Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD