ANDRÉS MARÍA ROLDÁN ARANDA-rekin lankidetzan egindako argitalpenak (7)

2022

  1. Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach

    Journal of Physics D: Applied Physics, Vol. 55, Núm. 15

2021

  1. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  2. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain

    Journal of Computational and Applied Mathematics, Vol. 354, pp. 326-333

  2. Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

    Microelectronic Engineering, Vol. 215

2015

  1. A SPICE compact model for unipolar RRAM reset process analysis

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 3, pp. 955-962