JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
Technion – Israel Institute of Technology
Haifa, IsraelPublications in collaboration with researchers from Technion – Israel Institute of Technology (6)
2022
-
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
Advanced Electronic Materials, Vol. 8, Núm. 8
2021
-
Advanced Data Encryption using 2D Materials
Advanced Materials, Vol. 33, Núm. 27
-
In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy
Small, Vol. 17, Núm. 26
-
Time series modeling of the cycle-to-cycle variability in h-BN based memristors
IEEE International Reliability Physics Symposium Proceedings
2020
-
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
IEEE International Reliability Physics Symposium Proceedings
-
Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages
IEEE International Reliability Physics Symposium Proceedings