Publicacións en colaboración con investigadores/as de Technion – Israel Institute of Technology (6)

2022

  1. Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

    Advanced Electronic Materials, Vol. 8, Núm. 8

2021

  1. Advanced Data Encryption ​using 2D Materials

    Advanced Materials, Vol. 33, Núm. 27

  2. In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy

    Small, Vol. 17, Núm. 26

  3. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

  2. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings