Publikationen, an denen er mitarbeitet Josep Samitier Martí (3)

1986

  1. Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As

    Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766

  2. Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

    Surface Science, Vol. 168, Núm. 1-3, pp. 665-671

  3. Majority-carrier capture cross-section determination in the large deep-trap concentration cases

    Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569