1986

1. Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As

   Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766

2. Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

   Surface Science, Vol. 168, Núm. 1-3, pp. 665-671

3. Majority-carrier capture cross-section determination in the large deep-trap concentration cases

   Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569