PEDRO
CARTUJO ESTÉBANEZ
Forscher in der Zeit 2008-2009
![Foto de PEDRO](/img/nophoto.png)
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Universitat de Barcelona
Barcelona, EspañaPublikationen in Zusammenarbeit mit Forschern von Universitat de Barcelona (8)
1990
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Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities
Solid State Electronics, Vol. 33, Núm. 7, pp. 805-811
1986
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Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
Solid State Electronics, Vol. 29, Núm. 7, pp. 759-766
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Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
Surface Science, Vol. 168, Núm. 1-3, pp. 665-671
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Majority-carrier capture cross-section determination in the large deep-trap concentration cases
Journal of Applied Physics, Vol. 59, Núm. 5, pp. 1562-1569
1983
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Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon
Solid State Electronics, Vol. 26, Núm. 1, pp. 1-6
1982
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Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon
physica status solidi (b), Vol. 111, Núm. 1, pp. 375-382
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Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio
Applied Physics Letters, Vol. 41, Núm. 7, pp. 656-658
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Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide
Journal of Physics C: Solid State Physics, Vol. 15, Núm. 7