Publicaciones en colaboración con investigadores/as de IBM Research – Thomas J. Watson Research Center (3)

2003

  1. Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate

    Applied Physics Letters, Vol. 83, Núm. 23, pp. 4848-4850

2002

  1. On the enhanced electron mobility in strained-silicon inversion layers

    Journal of Applied Physics, Vol. 92, Núm. 12, pp. 7320-7324

2001

  1. Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

    Journal of Applied Physics, Vol. 89, Núm. 10, pp. 5478-5487