Osaka City University-ko ikertzaileekin lankidetzan egindako argitalpenak (5)

2013

  1. A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

    Solid-State Electronics, Vol. 90, pp. 127-133

  2. Effective capacitance area for pseudo-MOSFET characterization of bare SOIWafers by Split-C(V) measurements

    ECS Journal of Solid State Science and Technology, Vol. 2, Núm. 12

2012

  1. Impact of effective capacitance area on the characterization of SOI Wafers by Split-C(V) in Pseudo-MOSFET configuration

    IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012

  2. Multibranch mobility analysis for the characterization of FDSOI transistors

    IEEE Electron Device Letters, Vol. 33, Núm. 8, pp. 1102-1104

  3. Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET

    European Solid-State Device Research Conference