ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
DEPARTAMENTO
![Foto de ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES](/img/noimage.png)
![Foto de Vienna University of Technology](/img/noimage_org.png)
Vienna University of Technology
Viena, AustriaPublicaciones en colaboración con investigadores/as de Vienna University of Technology (10)
2021
-
A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design
IEEE Transactions on Electron Devices, Vol. 68, Núm. 6, pp. 3096-3103
2019
-
Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism
IEEE Electron Device Letters, Vol. 40, Núm. 10, pp. 1571-1574
2018
-
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors
2018 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2018)
-
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
-
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
2016
-
Device physics, modeling, and technology for nano-scaled semiconductor devices
Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (Institution of Engineering and Technology), pp. 17-185
-
Measurements of the Higgs boson production and decay rates and constraints on its couplings from a combined ATLAS and CMS analysis of the LHC pp collision data at √s = 7 and 8 TeV
Journal of High Energy Physics, Vol. 2016, Núm. 8
2015
-
A Space weather information service based upon remote and in-situ measurements of coronal mass ejections heading for Earth: A concept mission consisting of six spacecraft in a heliocentric orbit at 0.72 AU
Journal of Space Weather and Space Climate, Vol. 5
-
Combined Measurement of the Higgs Boson Mass in pp Collisions at s =7 and 8 TeV with the ATLAS and CMS Experiments
Physical Review Letters, Vol. 114, Núm. 19
2001
-
Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile
IEEE Transactions on Electron Devices, Vol. 48, Núm. 9, pp. 1878-1884