Publicaciones (22) Publicaciones en las que ha participado algún/a investigador/a

2008

  1. 3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 217-221

  2. A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations

    Journal of Applied Physics, Vol. 103, Núm. 8

  3. A low-frequency noise model for four-gate field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903

  4. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 342-345

  5. Accurate modeling of metal/HfO2/Si capacitors

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 155-158

  6. An atomistic-based correction of the effective-mass approach for investigating quantum dots

    Journal of Applied Physics, Vol. 104, Núm. 10

  7. Constructing gene networks using variational Bayesian variable selection

    Artificial Life, Vol. 14, Núm. 1, pp. 65-79

  8. Coulomb scattering in high- κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors

    Journal of Applied Physics, Vol. 104, Núm. 6

  9. Development of an Electrical Capacitance Tomography system using four rotating electrodes

    Sensors and Actuators, A: Physical, Vol. 148, Núm. 2, pp. 366-375

  10. Inferring the skeleton cell cycle regulatory network of malaria parasite using comparative genomic and variational Bayesian approaches

    Genetica, Vol. 132, Núm. 2, pp. 131-142

  11. Jonh Bardeem y el nacimiento de las nuevas tecnologías

    Contraluz: Revista de la Asociación Cultural Arturo Cerdá y Rico, Núm. 5, pp. 179-190

  12. Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416

  13. Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators

    Solid-State Electronics, Vol. 52, Núm. 12, pp. 1854-1860

  14. Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 205-208

  15. Network synchronization: Optimal and pessimal scale-free topologies

    Journal of Physics A: Mathematical and Theoretical, Vol. 41, Núm. 22

  16. Quantum-corrected Monte Carlo simulation of double gate silicon on insulation transistors

    Journal of Computational and Theoretical Nanoscience, Vol. 5, Núm. 6, pp. 1046-1057

  17. Redes Optimas: grafos de Ramanujan, jaulas y redes enmarañadas

    Revista española de física, Vol. 22, Núm. 4, pp. 57-61

  18. Scientific information systems: Tools for measures of biomedical research impact

    Medicina Clinica, Vol. 131, Núm. SUPPL. 5, pp. 71-80

  19. The CMS experiment at the CERN LHC

    Journal of Instrumentation, Vol. 3, Núm. 8

  20. The quantization impact of accumulated carriers in silicide-gated MOSFETs

    IEEE Electron Device Letters, Vol. 29, Núm. 6, pp. 628-631