Département
ELECTRÓNICA Y TECNOLOGÍA DE COMPUTADORES
Publications (22) Publications auxquelles un chercheur a participé
2008
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3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 217-221
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A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations
Journal of Applied Physics, Vol. 103, Núm. 8
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A low-frequency noise model for four-gate field-effect transistors
IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903
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A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 342-345
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Accurate modeling of metal/HfO2/Si capacitors
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 155-158
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An atomistic-based correction of the effective-mass approach for investigating quantum dots
Journal of Applied Physics, Vol. 104, Núm. 10
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Constructing gene networks using variational Bayesian variable selection
Artificial Life, Vol. 14, Núm. 1, pp. 65-79
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Coulomb scattering in high- κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
Journal of Applied Physics, Vol. 104, Núm. 6
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Development of an Electrical Capacitance Tomography system using four rotating electrodes
Sensors and Actuators, A: Physical, Vol. 148, Núm. 2, pp. 366-375
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Inferring the skeleton cell cycle regulatory network of malaria parasite using comparative genomic and variational Bayesian approaches
Genetica, Vol. 132, Núm. 2, pp. 131-142
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Jonh Bardeem y el nacimiento de las nuevas tecnologías
Contraluz: Revista de la Asociación Cultural Arturo Cerdá y Rico, Núm. 5, pp. 179-190
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Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416
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Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators
Solid-State Electronics, Vol. 52, Núm. 12, pp. 1854-1860
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Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 205-208
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Network synchronization: Optimal and pessimal scale-free topologies
Journal of Physics A: Mathematical and Theoretical, Vol. 41, Núm. 22
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Quantum-corrected Monte Carlo simulation of double gate silicon on insulation transistors
Journal of Computational and Theoretical Nanoscience, Vol. 5, Núm. 6, pp. 1046-1057
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Redes Optimas: grafos de Ramanujan, jaulas y redes enmarañadas
Revista española de física, Vol. 22, Núm. 4, pp. 57-61
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Scientific information systems: Tools for measures of biomedical research impact
Medicina Clinica, Vol. 131, Núm. SUPPL. 5, pp. 71-80
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The CMS experiment at the CERN LHC
Journal of Instrumentation, Vol. 3, Núm. 8
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The quantization impact of accumulated carriers in silicide-gated MOSFETs
IEEE Electron Device Letters, Vol. 29, Núm. 6, pp. 628-631