Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

  1. Gámiz, F.
  2. Godoy, A.
  3. Roldán, J.B.
  4. Carceller, J.E.
  5. Cartujo, P.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2003

Volume: 18

Issue: 11

Pages: 927-937

Type: Article

DOI: 10.1088/0268-1242/18/11/304 GOOGLE SCHOLAR
Data source: Scopus