Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

  1. Gámiz, F.
  2. Godoy, A.
  3. Roldán, J.B.
  4. Carceller, J.E.
  5. Cartujo, P.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2003

Volumen: 18

Número: 11

Pages: 927-937

Type: Article

DOI: 10.1088/0268-1242/18/11/304 GOOGLE SCHOLAR
La source de données: Scopus