Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

  1. Gámiz, F.
  2. Cartujo-Cassinello, P.
  3. Jiménez-Molinos, F.
  4. Carceller, J.E.
  5. Cartujo, P.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 2003

Alea: 83

Zenbakia: 15

Orrialdeak: 3120-3122

Mota: Artikulua

DOI: 10.1063/1.1619217 GOOGLE SCHOLAR
Datuen iturria: Scopus