Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
ISSN: 0003-6951
Année de publication: 2003
Volumen: 83
Número: 15
Pages: 3120-3122
Type: Article
ISSN: 0003-6951
Année de publication: 2003
Volumen: 83
Número: 15
Pages: 3120-3122
Type: Article