Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

  1. Rodríguez, S.
  2. Gámiz, F.
  3. Palma, A.
  4. Cartujo, P.
  5. Carceller, J.E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2000

Volume: 88

Issue: 4

Pages: 1978-1982

Type: Article

DOI: 10.1063/1.1304839 GOOGLE SCHOLAR
Data source: Scopus