A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1996

Volume: 80

Issue: 9

Pages: 5121-5128

Type: Article

DOI: 10.1063/1.363493 GOOGLE SCHOLAR
Data source: Scopus