A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs
ISSN: 0021-8979
Année de publication: 1996
Volumen: 80
Número: 9
Pages: 5121-5128
Type: Article
ISSN: 0021-8979
Année de publication: 1996
Volumen: 80
Número: 9
Pages: 5121-5128
Type: Article