Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
- Balaguer, M.
- Roldán, J.B.
- Donetti, L.
- Gámiz, F.
ISSN: 0038-1101
Year of publication: 2012
Volume: 67
Issue: 1
Pages: 30-37
Type: Article