Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

  1. Balaguer, M.
  2. Roldán, J.B.
  3. Donetti, L.
  4. Gámiz, F.
Aldizkaria:
Solid-State Electronics

ISSN: 0038-1101

Argitalpen urtea: 2012

Alea: 67

Zenbakia: 1

Orrialdeak: 30-37

Mota: Artikulua

DOI: 10.1016/J.SSE.2011.09.006 GOOGLE SCHOLAR
Datuen iturria: Scopus