Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

  1. Balaguer, M.
  2. Roldán, J.B.
  3. Donetti, L.
  4. Gámiz, F.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2012

Volumen: 67

Número: 1

Pages: 30-37

Type: Article

DOI: 10.1016/J.SSE.2011.09.006 GOOGLE SCHOLAR
La source de données: Scopus