Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs
ISSN: 0018-9383
Année de publication: 2011
Volumen: 58
Número: 10
Pages: 3350-3357
Type: Article
ISSN: 0018-9383
Année de publication: 2011
Volumen: 58
Número: 10
Pages: 3350-3357
Type: Article