Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs

  1. Ruiz, F.G.
  2. Tienda-Luna, I.M.
  3. Godoy, A.
  4. Sampedro, C.
  5. Gámiz, F.
  6. Donetti, L.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2011

Volumen: 59

Número: 1

Pages: 62-67

Type: Communication dans un congrès

DOI: 10.1016/J.SSE.2011.01.005 GOOGLE SCHOLAR
La source de données: Scopus