Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators

  1. Tienda-Luna, I.M.
  2. García Ruiz, F.J.
  3. Donetti, L.
  4. Godoy, A.
  5. Gámiz, F.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2008

Volume: 52

Issue: 12

Pages: 1854-1860

Type: Article

DOI: 10.1016/J.SSE.2008.06.059 GOOGLE SCHOLAR
Data source: Scopus