On the enhanced electron mobility in strained-silicon inversion layers

  1. Fischetti, M.V.
  2. Gámiz, F.
  3. Hänsch, W.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2002

Volume: 92

Issue: 12

Pages: 7320-7324

Type: Article

DOI: 10.1063/1.1521796 GOOGLE SCHOLAR
Data source: Scopus