Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

  1. Jiménez-Molinos, F.
  2. Palma, A.
  3. Gámiz, F.
  4. Banqueri, J.
  5. López-Villanueva, J.A.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2001

Volume: 90

Issue: 7

Pages: 3396-3404

Type: Article

DOI: 10.1063/1.1398603 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus