Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

  1. Gamiz, F.
  2. Fischetti, M.V.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2001

Volumen: 89

Número: 10

Pages: 5478-5487

Type: Article

DOI: 10.1063/1.1358321 GOOGLE SCHOLAR
La source de données: Scopus