A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

  1. Gámiz, F.
  2. Roldán, J.B.
  3. López-Villanueva, J.A.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1997

Volumen: 81

Número: 10

Pages: 6857-6865

Type: Article

DOI: 10.1063/1.365245 GOOGLE SCHOLAR
La source de données: Scopus