Electron transport properties of quantized silicon carbide inversion layers

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López Villanueva, J.A.
  4. Cartujo, P.
Journal:
Journal of Electronic Materials

ISSN: 0361-5235

Year of publication: 1997

Volume: 26

Issue: 3

Pages: 203-207

Type: Article

DOI: 10.1007/S11664-997-0151-3 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus