Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

  1. Lanza, M.
  2. Palumbo, F.
  3. Shi, Y.
  4. Aguirre, F.
  5. Boyeras, S.
  6. Yuan, B.
  7. Yalon, E.
  8. Moreno, E.
  9. Wu, T.
  10. Roldan, J.B.
Revista:
Advanced Electronic Materials

ISSN: 2199-160X

Any de publicació: 2022

Volum: 8

Número: 8

Tipus: Article

DOI: 10.1002/AELM.202100580 GOOGLE SCHOLAR
Font de les dades: Scopus