Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

  1. Lanza, M.
  2. Palumbo, F.
  3. Shi, Y.
  4. Aguirre, F.
  5. Boyeras, S.
  6. Yuan, B.
  7. Yalon, E.
  8. Moreno, E.
  9. Wu, T.
  10. Roldan, J.B.
Aldizkaria:
Advanced Electronic Materials

ISSN: 2199-160X

Argitalpen urtea: 2022

Alea: 8

Zenbakia: 8

Mota: Artikulua

DOI: 10.1002/AELM.202100580 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak

Datuen iturria: Scopus