Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

  1. Lanza, M.
  2. Palumbo, F.
  3. Shi, Y.
  4. Aguirre, F.
  5. Boyeras, S.
  6. Yuan, B.
  7. Yalon, E.
  8. Moreno, E.
  9. Wu, T.
  10. Roldan, J.B.
Revue:
Advanced Electronic Materials

ISSN: 2199-160X

Année de publication: 2022

Volumen: 8

Número: 8

Type: Article

DOI: 10.1002/AELM.202100580 GOOGLE SCHOLAR
La source de données: Scopus