Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

  1. Lanza, M.
  2. Palumbo, F.
  3. Shi, Y.
  4. Aguirre, F.
  5. Boyeras, S.
  6. Yuan, B.
  7. Yalon, E.
  8. Moreno, E.
  9. Wu, T.
  10. Roldan, J.B.
Revista:
Advanced Electronic Materials

ISSN: 2199-160X

Ano de publicación: 2022

Volume: 8

Número: 8

Tipo: Artigo

DOI: 10.1002/AELM.202100580 GOOGLE SCHOLAR
Fonte de datos: Scopus