Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

  1. Lanza, M.
  2. Palumbo, F.
  3. Shi, Y.
  4. Aguirre, F.
  5. Boyeras, S.
  6. Yuan, B.
  7. Yalon, E.
  8. Moreno, E.
  9. Wu, T.
  10. Roldan, J.B.
Zeitschrift:
Advanced Electronic Materials

ISSN: 2199-160X

Datum der Publikation: 2022

Ausgabe: 8

Nummer: 8

Art: Artikel

DOI: 10.1002/AELM.202100580 GOOGLE SCHOLAR