Publicaciones en colaboración con investigadores/as de Korea Institute of Science and Technology (8)

2019

  1. Characteristics of band modulation FET on sub 10 nm SOI

    Japanese Journal of Applied Physics, Vol. 58, Núm. SB

  2. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters

    Solid-State Electronics, Vol. 143, pp. 10-19

2017

  1. Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 11, pp. 4486-4491

  2. Ultra-low power 1T-DRAM in FDSOI technology

    Microelectronic Engineering, Vol. 178, pp. 245-249

  3. Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 4904-4909

2016

  1. Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

    2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016

2015

  1. Special memory mechanisms in SOI devices

    ECS Transactions