FRANCISCO MANUEL
GÓMEZ CAMPOS
PROFESOR TITULAR DE UNIVERSIDAD
Publicaciones en las que colabora con FRANCISCO MANUEL GÓMEZ CAMPOS (14)
2023
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3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach
Materials Horizons, Vol. 11, Núm. 4, pp. 949-957
2022
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Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach
Journal of Physics D: Applied Physics, Vol. 55, Núm. 15
2020
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Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
Journal of Physics D: Applied Physics, Vol. 53, Núm. 22
2018
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A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach
Journal of Applied Physics, Vol. 123, Núm. 15
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Analysis of conductive filament density in resistive random access memories: A 3D kinetic Monte Carlo approach
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, Núm. 6
2017
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A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
Journal of Physics D: Applied Physics, Vol. 50, Núm. 33
2015
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An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
Solid-State Electronics, Vol. 111, pp. 47-51
2011
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Learning in a virtual laboratory: Educational applications of three-dimensional animations
International Journal of Innovation and Learning, Vol. 9, Núm. 3, pp. 325-337
2009
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Effect of traps in the performance of four gate transistors
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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A low-frequency noise model for four-gate field-effect transistors
IEEE Transactions on Electron Devices, Vol. 55, Núm. 3, pp. 896-903
2005
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Characterization of oxygen related defects in silicon p-n junctions
2005 Spanish Conference on Electron Devices, Proceedings
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Effects of oxygen-related traps in silicon on the generation-recombination noise
AIP Conference Proceedings
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Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework
Journal of Applied Physics, Vol. 97, Núm. 1