ANDRÉS
GODOY MEDINA
CATEDRÁTICO DE UNIVERSIDAD
FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
Publicaciones en las que colabora con FRANCISCO JESÚS GÁMIZ PÉREZ (130)
2019
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A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Solid-State Electronics, Vol. 159, pp. 19-25
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Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152
2018
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3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Solid-State Electronics, Vol. 143, pp. 49-55
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Scaling FDSOI technology down to 7 nm - A physical modeling study based on 3D phase-space subband boltzmann transport
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo
IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746
2017
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Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Confinement orientation effects in S/D tunneling
Solid-State Electronics, Vol. 128, pp. 48-53
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Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
Journal of Physics D: Applied Physics, Vol. 50, Núm. 49
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Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
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Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Three-dimensional multi-subband simulation of scaled FinFETs
European Solid-State Device Research Conference
2016
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Confinement orientation effects in S/D tunneling
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Impact of non uniform strain configuration on transport properties for FD14+ devices
Solid-State Electronics, Vol. 115, pp. 232-236
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Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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On the influence of the back-gate bias on InGaAs Trigate MOSFETs
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
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Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191
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Analytic drain current model for III-V cylindrical nanowire transistors
Journal of Applied Physics, Vol. 118, Núm. 4