Publicaciones en las que colabora con JUAN BAUTISTA ROLDÁN ARANDA (21)

2022

  1. Comprehensive study on unipolar RRAM charge conduction and stochastic features: A simulation approach

    Journal of Physics D: Applied Physics, Vol. 55, Núm. 15

2021

  1. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  2. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain

    Journal of Computational and Applied Mathematics, Vol. 354, pp. 326-333

  2. Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

    Microelectronic Engineering, Vol. 215

2017

  1. Polynomial pattern finding in scattered data

    Journal of Computational and Applied Mathematics, Vol. 318, pp. 107-116

2015

  1. A SPICE compact model for unipolar RRAM reset process analysis

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 3, pp. 955-962

  2. An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

    Mathematics and Computers in Simulation, Vol. 118, pp. 248-257

2014

  1. A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

    Mathematics and Computers in Simulation, Vol. 102, pp. 1-10

  2. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal-oxide-semiconductor integration

    Journal of Applied Physics

2013

  1. In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs

    Solid-State Electronics, Vol. 79, pp. 179-184

  2. Magnetic Tunnel Junction (MTJ) sensors for integrated circuits (IC) electric current measurement

    Proceedings of IEEE Sensors

2012

  1. An advanced drain current model for DGMOSFETs including self-heating effects

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

2011

  1. Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level

    Solid-State Electronics, Vol. 54, Núm. 12, pp. 1606-1612

  2. Quasi-static electrical model for magnetoresistive current sensors

    Renewable Energy and Power Quality Journal, Vol. 1, Núm. 8, pp. 731-734

2008

  1. A in-depth simulation study of CMOS inverters based on the novel surrounding gate transistors

    Proceedings - International Conference on Advances in Electronics and Micro-electronics, ENICS 2008

2006

  1. Characterization of electron transport at high fields in silicon-on-insulator devices: A Monte Carlo study

    Semiconductor Science and Technology, Vol. 21, Núm. 1, pp. 81-86

2005

  1. SPICE BSIMSOI enhancement to account for velocity overshoot effects

    2005 Spanish Conference on Electron Devices, Proceedings