Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (5)

2004

  1. Image and exchange-correlation effects in double gate silicon-on-insulator transistors

    Microelectronic Engineering

2003

  1. Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

    Applied Physics Letters, Vol. 83, Núm. 15, pp. 3120-3122

  2. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770