Publicacions en què col·labora amb JOSÉ LUIS PADILLA DE LA TORRE (23)

2023

  1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

    Solid-State Electronics, Vol. 200

  2. Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2022

  1. Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator

    Micromachines, Vol. 13, Núm. 4

  2. Performance of FDSOI double-gate dual-doped reconfigurable FETs

    Solid-State Electronics, Vol. 194

  3. Towards a DFT-based layered model for TCAD simulations of MoS2

    Solid-State Electronics, Vol. 197

2021

  1. Self-consistent enhanced s/d tunneling implementation in a 2d ms-emc nanodevice simulator

    Micromachines, Vol. 12, Núm. 6

2020

  1. Efficient Implementation of S/D tunneling in 2D MS-EMC of Nanoelectronic Devices including the Thickness Dependent Effective Mass

    2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

  2. Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Quantum enhancement of a s/d tunneling model in a 2d ms-emc nanodevice simulator: NEGF comparison and impact of effective mass variation

    Micromachines, Vol. 11, Núm. 2

  4. Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2019

  1. Impact of effective mass on transport properties and direct source-to-drain tunneling in ultrascaled double gate devices: A 2D multi-subband ensemble monte carlo study

    2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019

  2. Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  3. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

  4. On the Low-Frequency Noise Characterization of Z2-FET Devices

    IEEE Access, Vol. 7, pp. 42551-42556

2018

  1. Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 10, pp. 4679-4686

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  5. Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746

2017

  1. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings