Publicaciones en las que colabora con ANDRÉS GODOY MEDINA (130)

2019

  1. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

    Solid-State Electronics, Vol. 159, pp. 19-25

  2. Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1145-1152

2018

  1. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  2. Impact of Strain on S/D tunneling in FinFETs: A MS-EMC study

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Solid-State Electronics, Vol. 143, pp. 49-55

  5. Scaling FDSOI technology down to 7 nm - A physical modeling study based on 3D phase-space subband boltzmann transport

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  6. Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 11, pp. 4740-4746

2017

  1. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  2. Confinement orientation effects in S/D tunneling

    Solid-State Electronics, Vol. 128, pp. 48-53

  3. Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 49

  4. Multi-subband ensemble Monte Carlo simulations of scaled GAA MOSFETs

    Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

  5. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  6. Three-dimensional multi-subband simulation of scaled FinFETs

    European Solid-State Device Research Conference

2016

  1. Confinement orientation effects in S/D tunneling

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  2. Impact of non uniform strain configuration on transport properties for FD14+ devices

    Solid-State Electronics, Vol. 115, pp. 232-236

  3. Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. On the influence of the back-gate bias on InGaAs Trigate MOSFETs

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

2015

  1. Analytic Potential and Charge Model of Semiconductor Quantum Wells

    IEEE Transactions on Electron Devices, Vol. 62, Núm. 12, pp. 4186-4191

  2. Analytic drain current model for III-V cylindrical nanowire transistors

    Journal of Applied Physics, Vol. 118, Núm. 4