FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
Carlos
Navarro
Publications by the researcher in collaboration with Carlos Navarro (61)
2024
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Low-Frequency Noise in InGaAs-OI Transistors
IEEE Transactions on Electron Devices, Vol. 71, Núm. 6, pp. 3964-3969
2023
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3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
Solid-State Electronics, Vol. 200
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Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Liquid-gate 2D material-on-insulator transistors for sensing applications
Solid-State Electronics, Vol. 207
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Low-Frequency Noise in InGaAs-OI 1T-DRAMs
2023 International Conference on Noise and Fluctuations, ICNF 2023
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Simulation of BioGFET sensors using TCAD
Solid-State Electronics, Vol. 208
2022
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Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
Micromachines, Vol. 13, Núm. 4
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DFT-based layered dielectric model of few-layer MoS2
Solid-State Electronics, Vol. 194
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Improved inter-device variability in graphene liquid gate sensors by laser treatment
Solid-State Electronics, Vol. 192
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Performance of FDSOI double-gate dual-doped reconfigurable FETs
Solid-State Electronics, Vol. 194
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Towards a DFT-based layered model for TCAD simulations of MoS2
Solid-State Electronics, Vol. 197
2021
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A review of sharp-switching band-modulation devices
Micromachines, Vol. 12, Núm. 12
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Hysteresis in as-synthesized mos2 transistors: Origin and sensing perspectives
Micromachines, Vol. 12, Núm. 6
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Improved inter-device variability in graphene liquid gate sensors by laser treatment
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021
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Improved retention characteristics of Z2-FET employing half back-gate control
IEEE Transactions on Electron Devices, Vol. 68, Núm. 3, pp. 1041-1044
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Memory Operation of Z²-FET without Selector at High Temperature
IEEE Journal of the Electron Devices Society, Vol. 9, pp. 658-662
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Performance and reliability in back-gated CVD-grown MoS2 devices
Solid-State Electronics, Vol. 186
2020
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CVD-grown back-gated MoS2transistors
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
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Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic
IEEE Access, Vol. 8, pp. 132376-132381
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Investigating the transient response of Schottky barrier back-gated MoS2 transistors
2D Materials, Vol. 7, Núm. 2