Publicaciones en las que colabora con ENRIQUE GONZÁLEZ MARÍN (40)

2023

  1. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  2. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

  3. Variability Assessment of the Performance of MoS2-Based BioFETs

    Chemosensors, Vol. 11, Núm. 1

2022

  1. Multi-scale modeling of 2D GaSe FETs with strained channels

    Nanotechnology, Vol. 33, Núm. 10

  2. Periodic structures based on two-dimensional materials: application to phase shifters

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

2021

  1. A unified compact model for electrostatics of III–V GAA transistors with different geometries

    Journal of Computational Electronics, Vol. 20, Núm. 5, pp. 1676-1684

  2. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  3. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  4. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Compact Modeling of Multi-Layered MoS2FETs including Negative Capacitance Effect

    IEEE Journal of the Electron Devices Society, Vol. 8, pp. 1177-1183

  3. Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2FETs

    4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

  4. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs

    4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

2019

  1. A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 1, pp. 73-79

  2. A compact model for III–V nanowire electrostatics including band non-parabolicity

    Journal of Computational Electronics, Vol. 18, Núm. 4, pp. 1229-1235

  3. Assessment of three electrolyte-molecule electrostatic interaction models for 2D material based BioFETs

    Nanoscale Advances, Vol. 1, Núm. 3, pp. 1077-1085

  4. Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs with Square Geometry

    2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019

  5. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  6. GFET asymmetric transfer response analysis through access region resistances

    Nanomaterials, Vol. 9, Núm. 7