Publicaciones en las que colabora con ALBERTO JOSÉ PALMA LÓPEZ (14)

2005

  1. A simple model for analysing the effects of band non-parabolicity in nanostructures

    Semiconductor Science and Technology, Vol. 20, Núm. 6, pp. 532-539

  2. A simple model to analyze electron confinement and trapping in silicon nanodots

    2005 Spanish Conference on Electron Devices, Proceedings

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

  2. Optimum design in a JFET for minimum generation-recombination noise

    Microelectronics Reliability, Vol. 40, Núm. 11, pp. 1965-1968

1997

  1. Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study

    Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

  2. Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 56, Núm. 15, pp. 9565-9574

  3. Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

    Applied Physics Letters, Vol. 70, Núm. 16, pp. 2153-2155

1996

  1. Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 99-103

  2. Electric field dependence of the electron capture cross section of neutral traps in SiO2

    Journal of the Electrochemical Society, Vol. 143, Núm. 8, pp. 2687-2690

  3. Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

    IEE Proceedings: Circuits, Devices and Systems, Vol. 143, Núm. 4, pp. 202-206

1995

  1. Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors

    Journal of Applied Physics, Vol. 77, Núm. 5, pp. 1998-2005

  2. Influence of the position of deep levels on generation-recombination noise

    Applied Physics Letters, Vol. 67, pp. 3581

  3. Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

    Physical Review B, Vol. 51, Núm. 20, pp. 14147-14151

1993

  1. Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

    Journal of Applied Physics, Vol. 74, Núm. 4, pp. 2605-2612