Publicaciones en las que colabora con Gerardo González-Cordero (18)

2021

  1. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

    Journal of Applied Physics, Vol. 130, Núm. 5

  2. On the thermal models for resistive random access memory circuit simulation

    Nanomaterials, Vol. 11, Núm. 5

  3. Study of RTN signals in resistive switching devices based on neural networks

    Solid-State Electronics, Vol. 183

  4. Synaptic devices based on HfO2 memristors

    Mem-elements for Neuromorphic Circuits with Artificial Intelligence Applications (Elsevier), pp. 383-426

2020

  1. A physically based SPICE model for RRAMs including RTN

    2020 35th Conference on Design of Circuits and Integrated Systems, DCIS 2020

  2. Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation

    2020 35th Conference on Design of Circuits and Integrated Systems, DCIS 2020

  3. Neural network based analysis of random telegraph noise in resistive random access memories

    Semiconductor Science and Technology, Vol. 35, Núm. 2

2019

  1. A new technique to analyze RTN signals in resistive memories

    Microelectronic Engineering, Vol. 215

  2. Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

    Solid-State Electronics, Vol. 157, pp. 25-33

  3. New method to analyze random telegraph signals in resistive random access memories

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, Núm. 1

2018

  1. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. A physically based model for resistive memories including a detailed temperature and variability description

    Microelectronic Engineering, Vol. 178, pp. 26-29

  2. A physically based model to describe resistive switching in different RRAM technologies

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, Núm. 1

  4. SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes

    2017 Spanish Conference on Electron Devices, CDE 2017

  5. SPICE simulation of RRAM circuits. A compact modeling perspective

    2017 Spanish Conference on Electron Devices, CDE 2017

2016

  1. A new compact model for bipolar RRAMs based on truncated-cone conductive filaments - A Verilog-A approach

    Semiconductor Science and Technology, Vol. 31, Núm. 11

  2. Simulation of RRAM memory circuits, a Verilog-A compact modeling approach

    2016 Conference on Design of Circuits and Integrated Systems, DCIS 2016 - Proceedings